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2SK2212
Silicon N Channel MOS FET
REJ03G1003-0200 (Previous: ADE-208-1351) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D G
1. Gate 2. Drain 3. Source
1
23
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2212
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 200 20 10 40 10 30 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 200 20 20 -- -- 2.0 -- 3.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.24 6 1000 360 65 18 80 65 50 1.1 190 Max -- -- 10 250 4.0 0.3 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 160 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V*1 ID = 5 A, VDS = 10 V*1 VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6
IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF / dt = 100 A / s
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK2212
Main Characteristics
Power vs. Temperature Derating
40 50
10
Maximum Safe Operation Area
10
PW
D C pe O
Channel Dissipation Pch (W)
s
20
0
Drain Current ID (A)
30
10 5 2 1 0.5 0.2 0.1 0.05 Ta = 25C
2 5
s
=
1
10
m s
s (1 sh ot m
20
Operation in this area is limited by RDS(on)
t ra n io c (T
)
= 25 C )
10
0
50
100
150
200
0.5 1
10 20
50 100 200 500
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 10 V 10
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
12
Drain Current ID (A)
16
6V
8
5.5 V 5V 4.5 V
VGS = 3.5 V
6 Tc = 75C 4 25C -25C
8
4
2
4V 16 20 0 2 4 6 8 10
0
4
8
12
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
5 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
10 Pulse Test 5
Drain to Source Saturation Voltage VDS (on) (V)
4
Static Drain to Source on State Resistance RDS (on) ()
2 1 0.5
VGS = 10 V
3
ID = 10 A
2 5A 1 2A 0 4 8 12 16 20
0.2 0.1 0.5
15 V 1 2 5 10 20 50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK2212
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S)
1.0
VGS = 10 V Pulse Test
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
10 5 Tc = -25C 25C 75C 2 1 0.5
VDS = 10 V Pulse Test
0.8
0.6 ID = 10 A 0.4 2A 0.2 0 -40 5A
0.2 0.1 0.1
0
40
80
120
160
0.3
1
3
10
30
100
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
500
5000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
100 50
Capacitance C (pF)
200
1000
Ciss
Coss
100
20 10 5 0.2 di / dt = 100 A / s VGS = 0, Ta = 25C 0.5 1 2 5 10 20
10 5
VGS = 0 f = 1 MHz
Crss
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics Drain to Source Voltage VDS (V)
500
Switching Characteristics
20 500
Gate to Source Voltage VGS (V)
VGS
Switching Time t (ns)
400
VDD = 50 V 100 V 150 V
16
200 100 50
tr td(off) tf td(on)
300
12 ID = 15 A
VDS VDD = 150 V 100 V 50 V
200
8
20 10 5 0.2
100
4 0 40
VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 %
0
8
16
24
32
0.5
1
2
5
10
20
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK2212
Reverse Drain Current vs. Source to Drain Voltage
20
Reverse Drain Current IDR (A)
Pulse Test 16
12
VGS = 0, -5 V
8 10 V 5V
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance S (t)
3 Tc = 25C 25 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C 4.17
PDM PW T
0.03
0.01 10
0.02 1 lse 0.0 pu ot h 1s
D=
PW T
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 30 V Vout Monitor Vin Vout Vin 10 V 50 10% 10%
Waveforms
90%
10%
90% td(on) tr
90% td(off) tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK2212
Package Dimensions
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AD-A
Package Name TO-220FM / TO-220FMV
MASS[Typ.] 1.8g
Unit: mm
10.0 0.3 7.0 0.3 3.2 0.2
2.8 0.2 2.5 0.2
0.6
5.0 0.3
2.0 0.3
1.2 0.2 1.4 0.2
12.0 0.3
4.45 0.3 2.5
0.7 0.1 2.54 0.5 2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK2212-E Quantity 500 pcs Box (Sack) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
14.0 1.0
17.0 0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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